RPI-130 photointerrupter, ultraminiature dip type applications dsc(digital steal camera) dvc(digital video camera) digital handy phone features 1) ultraminiature dip type. 2) gap 1.2mm. absolute maximum ratings (ta = 25 c) electrical and optical characteristics (ta = 25 c) electrical and optical characteristics curves fig.1 relative output current vs. distance ( ) fig.4 relative output current vs. distance ( ) fig.2 forward current falloff fig.6 relative output vs. ambient temperature fig.3 forward current vs. forward voltage fig.5 power dissipation / collector power dissipation vs. ambient temperature parameter cut-off frequency ? non-coherent infrared light emitting diode used. peak light emitting wavelength rise time fall time symbol v f i r i ceo p p i c f c v ce(sat) tr tf min. ? ? ? ? 2 ? ? typ. 1.45 ? ? 800 ? ? 10 max. 1.75 10 0.1 ? 10 0.4 ? unit vi f = 20ma i f = 50ma v r = 5v v ce = 10v ? ? v ce = 5v, i f = 10ma i f = 20ma, i c = 0.1ma v cc = 5v, i f = 20ma, r l = 100 a a nm ma v s ? 10 ? s ? 1 ? mhz ? 850 ? nm conditions maximum sensitivity wavelength p ? 800 ? nm ? this product is not designed to be protected against electromagnetic wave. v cc = 5v, i c = 1ma, r l = 100 tr tf response time ? 10 ? s forward voltage reverse current dark current peak sensitivity wavelength collector current collector-emitter saturation voltage response time input charac- teristics output charac- teristics transfer characteristics photo transistor infrared light emitter diode parameter symbol i c v ceo p d v r i f p c v eco topr tstg limits ? 25 to + 85 ? 30 to + 85 50 5 80 30 4.5 30 80 unit ma v mw v v ma mw c c forward current reverse voltage power dissipation collector-emitter voltage emitter-collector voltage collector current collector power dissipation operating temperature storage temperature input (led) output photo- transistor ( ) distance : d (mm) ? 20 0 20 40 60 80 100 10 50 40 30 20 0 ambient temperature : ta ( c) forward current : i f ( ma ) forward current : i f ( ma) forward voltage : v f ( v) 00.5 11.5 2 0 2 4 6 8 10 12 14 16 18 20 75 c 50 c 25 c 0 c ? 25 c relative collector current : ic (%) 0 20 40 60 80 100 120 0 0.5 1 1.5 2 0 20 40 60 80 100 120 140 -25 0 25 50 75 100 distance : d (mm) relative collector current : ic (%) power dissipation / collector power dissiption p d /p c (mw) ambient temperature : ta ( c ) ? 20 0 40 60 80 20 100 0 20 40 60 80 100 120 p d yy p c relative collector current : ic ( % ) ambient temperature : ta ( c) v ce= 5v i f= 10ma 0 20 40 60 80 100 120 0 0.5 1 1.5
delay time rise time (time for output current to rise from 10% to 90% of peak current) fall time (time for output current to fall from 90% to 10% of peak current) t d : t r : t f : fig.12 response time measurement circuit t d t r t f 10% 90% r l v cc input input output output fig.11 output characteristics fig.8 response time vs. load resistance fig.9 dark current vs. ambient temperature fig.7 collector current vs. forward current dimensions (unit : mm) note) 1. unspecified tolerance shall be 0.2. 2. dimension in parenthesis are shown for reference. ambient temperature : ta ( c ) dark current : i ceo (na) 0 255075100 25 0.1 1 10 100 1000 v ce = 20v v ce = 10v v ce = 30v collector current : i c (ma) forward current : i f (ma) 0 2 4 6 8 10 12 14 16 18 20 0 1020304050 v ce =5v ta=25 ? load resistance : rl (k ) response time : t r ( s) 110 100 0 300 400 100 200 700 600 500 800 v cc = 5v i c = 0.1ma tr tf 0 5 10 15 20 25 0246810 corrector to emitter voltage : vce(v) collector current : ic(ma) i f =50ma i f =40ma i f =30ma i f =20ma i f =10ma internal connection diagram anode colletor cathode emitter 2010.10 rev.c (optical center) a-a' cross section a a' 0.7 0.4 0.7 2.0 4- 0. 3 1. 5 ( 1 .5 ) 3. 1 2- c0. 4 1. 4 ( 2. 0) (1.3) 2. 0 1. 2 4-0. 1 5 (1.1) (0.5) (0.65) (0.35) (0. 3) 1.4 0.5 1.7
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